ISL9K460P3
STEALTH? Dual Diode
The ISL9K460P3 is a STEALTH? dual diode optimized
for low loss
performance in high frequency hard switched
applications. The STEALTH? family exhibits low reverse
recovery current (Irr) and exceptionally
soft recovery
under typical operating conditions. This device is
intended for use as a free wheeling or boost diode in
power supplies and other power switching applications.
The low Irr
and short ta phase reduce loss in switching
transistors. The soft recovery minimizes ringing,
expanding the range of conditions under which the diode
may be operated without the use of additional snubber
circuitry. Consider using the STEALTH? diode with an
SMPS IGBT to provide the most efficient and highest
power density design at lower cost.
ISL9K460P3
8 A, 600 V, STEALTHTM
II Diode
Applications

SMPS FWD
 Hard Switched PFC Boost Diode
 UPS Free Wheeling Diode
 Motor Drive FWD

Snubber Diode
Device Maximum Ratings(per leg)TC= 25°C unless otherwise noted
Symbol
Parameter
Rating
Unit
VRRM
Peak Repetitive Reverse Voltage
600
V
VRWM
Working Peak Reverse Voltage
600
V
VR
DC Blocking Voltage
600
V
IF(AV)
Average Rectified Forward Current (TC
= 155°C)
4
A
Total Device Current (Both Legs)
8
A
IFRM
Repetitive Peak Surge Current (20kHz Square Wave)
8
A
IFSM
Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz)
50
A
PD
Power Dissipation
58
W
EAVL
Avalanche Energy (0.5A, 80mH)
10
mJ
TJ, TSTG
Operating and Storage Temperature Range
-55 to 175 °C
TL
TPKG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s
Package Body for 10s, See Techbrief TB334
300
260
°C
°C
CAUTION: Stresses above those listed in “Device Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
K
A2
JEDEC TO-220AB
CATHODE
(FLANGE)
CATHODE
ANODE 2
A1
ANODE 1
Package
Symbol
?
Stealth Recovery trr
= 17
ns (@ IF
= 4 A)
? Max Forward Voltage, VF
= 2.4 V (@ T
C
= 25°C)
?
600
V Reverse Voltage and High Reliability
? Avalanche Energy Rated
? RoHS Compliant
www.fairchildsemi.com
1
?2001 Fairchild Semiconductor Corporation
ISL9K460P3 Rev.C1
Description
Features
November 2013
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相关代理商/技术参数
ISL9K460P3_Q 功能描述:整流器 4A 600V RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel
ISL9K8120P3 功能描述:整流器 8a 1200V Stealth Dual RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel
ISL9K8120P3_Q 功能描述:整流器 8a 1200V Stealth Dual RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel
ISL9K860P3 功能描述:整流器 8A 600V RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel
ISL9K860P3_Q 功能描述:整流器 8A 600V RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel
ISL9N2357D3ST 功能描述:MOSFET 30V 35a NCh MOSFET 0.007 Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ISL9N302AP3 功能描述:MOSFET N-Channel PWM Logic Level RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ISL9N302AS3 功能描述:MOSFET N-Ch LL UltraFET PWM Optimized RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube